Device Name: Semiconductor Power Device Dynamic Test System
Manufacturer: ITC
Function Introduction: This device is used to test dynamic parameters of power devices such as switching time, gate charge, reverse recovery time, short-circuit tolerance, etc. Performance Introduction: Maximum voltage 1200Vdc, maximum current 200A; peak short-circuit tolerance current 400A

Device Name: Semiconductor Power Device Static Test System
Manufacturer: Tesec
Function Introduction: This device is used to test static parameters of power devices such as breakdown voltage, threshold current, leakage current, on-resistance, etc. Performance Introduction: Maximum voltage 1200V, current 200A

Device Name: Semiconductor Power Device Dynamic Test System
Manufacturer: Tesec
Function Introduction: This device is used to test dynamic parameters of power devices such as resistive switching time, inductive switching time, reverse recovery, etc. Performance Introduction: Maximum voltage 1500V, current 300A

Device Name: Semiconductor Power Device Thermal Resistance Test System
Manufacturer: Tesec
Function Introduction: This device is used to test transient thermal resistance of power devices. Performance Introduction: Maximum voltage 200V, current 50A

Device Name: Steady State Thermal Resistance Test System
Manufacturer: ANALYSIS TECH
Function Introduction: This device is used to test steady-state thermal resistance, transient thermal resistance, structure function, safe operating area, etc., of power devices. Performance Introduction: Maximum voltage 50V, current 20A, delay time less than 40us

Device Name: Semiconductor Power Device Avalanche Energy Test System
Manufacturer: ITC
Function Introduction: This device is used to test avalanche endurance of power devices. Performance Introduction: Avalanche detection voltage 2500V, current 400A; variable inductor box from 0.001~159.9mH

Device Name: Semiconductor Power Device Avalanche Energy Test System
Manufacturer: Tesec
Function Introduction: This device is used to test avalanche endurance of power devices. Performance Introduction: Voltage 200V, current 100A

Device Name: Semiconductor Power Device Gate Charge Test System
Manufacturer: ITC
Function Introduction: This device is used to test gate charge of power devices. Performance Introduction: Maximum voltage 100V, current 100A

Device Name: High-Power Semiconductor Tube Characteristic Graph Indicator
Manufacturer: Shanghai Xinchuang
Function Introduction: This device is used to test the output characteristic curves and breakdown curves of power devices. Performance Introduction: Maximum voltage 2000V, current 20A

Device Name: High Voltage Large Current Plotter
Manufacturer: IWATSU
Function Introduction: This device is used in conjunction with the Power Device Static Test System and Plotter to test static parameters of wafers. Performance Introduction: Compatible with 8-inch and 6-inch; Test platform temperature range: -60°C to 200°C; Magnetic probe seat: 4 seats; Platform maximum support voltage: 10KV

Device Name: Small Probe Station
Manufacturer: Shenzhen Sidiandianzi
Function Introduction: This device is used in conjunction with the Power Device Static Test System to test static parameters of wafers. Performance Introduction: Suitable for automatic testing of 6-inch probe stations

Device Name: LCR Test System
Manufacturer: HP
Function Introduction: This device is used to test the capacitance, inductance, and resistance of power devices. Performance Introduction: Maximum bias voltage 100V

Device Name: Agilent Precision LCR Meter
Manufacturer: Agilent
Function Introduction: This device is used to test the capacitance, inductance, and resistance of power devices. Performance Introduction: Maximum voltage 200V, frequency range 75k-30MHz

Device Name: Ultra-Low Temperature Chamber
Manufacturer: Zhongke Meiling
Function Introduction: This device is used to analyze the low-temperature characteristics of devices. Performance Introduction: Temperature range from -60°C to 0°C

Device Name: Reliability Comprehensive Test Analysis System
Manufacturer: CAS (Chinese Academy of Sciences)
Function Introduction: This device can test parameters such as peak junction temperature, peak thermal resistance, and junction temperature distribution of power devices. Performance Introduction: Measurement current adjustable from 1mA to 100mA, at least 8 steps adjustable; Applied power range: voltage 1-200V, current 1mA-5A

Device Name: Power Device Dynamic Test System
Manufacturer: Japanese Tesec
Function Introduction: This device is used to test dynamic parameters of power devices, such as inductive switching time, reverse recovery, short-circuit tolerance, etc. Performance Introduction: Switching parameter and Trr test capability: voltage 1500V, current 300A Short-circuit tolerance: voltage 1500V, current 2000A

Device Name: Notai Sorter
Manufacturer: Shenzhen Notai
Function Introduction: This device is used for automatic testing of power devices in various packaging forms. Performance Introduction: Packaging forms tested include TO-220/TO-247/TO-264

Device Name: Power Device High Voltage Static Test System
Manufacturer: Wen Micro
Function Introduction: This device can be used to test static parameters of semiconductor power devices, such as breakdown voltage, threshold current, leakage current, on-resistance, etc. Performance Introduction: Maximum voltage 10000V, maximum current 3000A Device Name: Power Device High Voltage Dynamic Test System Manufacturer: Wen Micro Function Introduction: This device can be used to test dynamic parameters of semiconductor power devices, such as inductive switching parameters, resistive switching parameters, reverse recovery, short-circuit tolerance, gate charge, etc.; Performance Introduction: Maximum voltage 4000V  maximum current 3000A