CAS-JUNSHINE MOSFET Product Positioning

CAS-JUNSHINE's latest generation SGT MOSFET technology offers the industry's most outstanding figure-of-merit characteristics.

Extremely low gate charge (even lower than 30nC for low on-resistance products) and optimized reverse recovery characteristics ensure extremely low conduction loss and switching loss when operating at high frequencies.

The new generation of products features extremely low on-resistance, thermal resistance coefficient, and very reliable avalanche characteristics (maximum exceeding 1J). It provides the most reliable solution for system surge current protection.

Related CAS-JUNSHINE Products Recommendation

30V-

JFG377N30L: DFN5*6, 1.2mΩ(max. @10Vgs)

JFG298N30L: DFN5*6, 0.9mΩ(max. @10Vgs)

JFG242N30L: DFN5*6, 2.2mΩ(max. @10Vgs)

JFG187N30K: DFN3*3, 2.7mΩ(max. @10Vgs)

JFG149N30K: DFN3*3, 1.9mΩ(max. @10Vgs)

40V-

JFG586N40Q: TOLL, 0.65mΩ(max. @10Vgs)

JFG441N40L: DFN5*6, 0.7mΩ(max. @10Vgs)

JFG206N40L: DFN5*6, 2.3mΩ(max. @10Vgs)